In order to unify the quality and performance, sinopower has been following. Irfp250, irfp250 mosfet nchannel transistor, buy irfp250 transistor. A, 16jun081power mosfetirf530, sihf530vishay siliconixfeatures dynamic dvdt rating repetitive avalanche rated datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Smps mosfet irf8010 hexfet power mosfet vdss rdson max id 100v 15m.
Third generation power mosfets from vishay provide the designer with. The information appearing here is for comparison purposes only and to use the devices within their specifications, please consult the full data sheet. Nchannel mosfet g d s to220ab g d s available rohs compliant ordering information package to220ab lead pb. Irl2505slhexfet power mosfetpd 926dl advanced process technologyl surface mount irl2505sl lowprofile throughhole irl2505ll 175c operating temperaturel fast switchingl fully avalanche ratedparameter datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. B, january 2002 irfp250n irfp250n nchannel power mosfet 200v, 30a, 0. Sinopower leadfree products contain molding compoundsdie attach materials and 100% matte tin plate. Irfp250npbf hexfet power mosfet 081810 parameter max. Si2304ds nchannel enhancement mode fieldeffect transistor. These nchannel mosfets from international rectifier utilize advanced processing techniques to achieve. Rohs irf250 series rohs semiconductor nell high power products nchannel power mosfet 30a, 200volts description d the nell irf250 is a threeterminal silicon device with current conduction capability of 30a, fast switching speed, low onstate resistance, breakdown voltage. Ao4455 typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 50 60v gs voltsqg nc figure 7. Fcp11n60fcpf11n60 tm fcp11n60fcpf11n60 general description superfettm is a new generation of high voltage mosfets from fairchild with outstanding low onresistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms.
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